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VBGQA1303 产品详细

产品简介:

VBGQA1303 is a single N-type field effect transistor suitable for high power and high voltage applications. Features include high drain-source voltage, low threshold voltage and low on-resistance.

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产品参数:

parameter:
- Structure type: single N type
- Maximum drain-source voltage (VDS): 30V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (RDS(on)) at VGS=4.5V: 3.5m次
- Drain-source on-resistance (RDS(on)) at VGS=10V: 2.7m次
- Maximum drain current (ID): 85A
- Technology: SGT
Package: DFN8(5X6)

领域和模块应用:

The following are examples of the application of this product in different fields and modules:

1. Electric vehicle module:
In electric vehicle modules, VBGQA1303 can be used in motor drives and battery management systems of electric vehicles. Its high drain-source voltage and low on-resistance characteristics enable it to provide stable power output and efficient energy conversion under high power loads.

2. Industrial power module:
Among industrial power modules, VBGQA1303 can be used for power control and power management of industrial equipment and robotic systems. Its high current handling capability and low on-resistance enable it to provide reliable power output and efficient power conversion in industrial environments.

3. Solar inverter module:
In solar inverter modules, VBGQA1303 can be used for inversion and power conversion of solar power generation systems. Its high drain-source voltage and low threshold voltage characteristics enable it to provide efficient energy conversion and stable output voltage in solar systems.

4. Power transmission module:
In the power transmission module, VBGQA1303 can be used for power control and management of transmission lines and grid systems. Its high performance and stability enable it to provide stable current output and precise power management in power transmission systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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