MOSFET

您现在的位置 > 首页 > MOSFET

VBGQA1153N 产品详细

产品简介:

VBGQA1153N is a single N-type power field effect transistor launched by the VBsemi brand. It is manufactured using SGT technology and is suitable for various low-power, small-size power applications. Products feature suitable drain-source voltage and drain current, as well as low threshold voltage and drain-source resistance, making them suitable for a variety of applications.

文件下载

下载PDF 文档
立即下载

产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 150V
- Nominal gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 26
- Rated drain current (ID): 45A
- Technology: SGT
Package: DFN8(5X6)

领域和模块应用:

for example:
1. Portable electronic products: The small size and low power characteristics of VBGQA1153N make it suitable for power management modules in portable electronic products, such as smartphones, tablets, etc., to provide efficient power conversion and management.
2. LED lighting module: In the field of LED lighting, VBGQA1153N can be used in LED drive circuits to control the brightness and stability of LED lamp beads and provide high-quality lighting effects.
3. Automotive electronic modules: In the field of automotive electronics, VBGQA1153N can be used in modules such as vehicle chargers and vehicle power management systems to provide reliable power conversion and management functions and support the normal operation of automotive electronic equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询