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VBGQA1152N 产品详细

产品简介:

VBGQA1152N is a unipolar N-type field effect transistor with a drain-source voltage (VDS) of 150V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 3V. When the gate-source voltage is 10V, its on-resistance is 21mΩ and the maximum drain current (ID) is 50A. Using SGT technology, the package is DFN8 (5X6).

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产品参数:

parameter:
- Unipolar N type
- VDS(V): 150
-VGS(㊣V): 20
-Vth(V): 3
- On-resistance (m次) at VGS=10V: 21
-ID(A): 50
- Technology: SGT
Package: DFN8(5X6)

领域和模块应用:

This product is suitable for various fields and modules, as follows:

1. Power management module: Because VBGQA1152N has a high drain-source voltage and moderate drain current, it can be used to design various power management modules, such as battery management systems, DC-DC converters, etc.

2. LED driver module: The current and voltage characteristics of VBGQA1152N make it suitable for LED driver modules, such as LED light bars, LED street lights, etc., to provide stable power output.

3. Communication equipment module: In the communication equipment module, VBGQA1152N can be used to control medium-power circuits, such as network routers, wireless base stations, etc., to achieve stable signal transmission and processing functions.

4. Automotive electronic modules: Due to its moderate power characteristics, VBGQA1152N can be used in automotive electronic modules, such as engine control units, vehicle entertainment systems, etc., to provide reliable power control and management functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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