产品参数:
Detailed parameter description:
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 13.5
- Maximum drain current (ID): 70A
- Technology: SGT (Silicon Gate Technology)
-Package: DFN8(5X6)
领域和模块应用:
It has a wide range of applications in a variety of fields and modules:
1. Power management module: VBGQA1151N is suitable for switching power supplies, DC-DC converters and chargers in the power management module. Its high drain-source voltage ensures stable and efficient operation of the module, and its moderate drain current and high drain-source resistance improves conversion efficiency and reduces power consumption.
2. Power tool module: In the field of power tools, VBGQA1151N can be used for motor drive, power management and battery charge and discharge control in the power tool control module. Its high voltage and current capabilities can meet the high power and high performance needs of power tools, while the DFN8 (5X6) package can meet the compact size and high-density integration requirements of power tool modules.
3. Automotive electronic modules: In the field of automotive electronics, VBGQA1151N can be used in modules such as vehicle power management, motor drive and lighting control. Its high voltage and current capabilities can meet the high power and high performance requirements of automotive electronic equipment, while the DFN8 (5X6) package can meet the compact size and high-density integration requirements of automotive electronic modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性