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VBGQA1103 产品详细

产品简介:

VBGQA1103 is a single N-channel field effect transistor using SGT technology. It has the characteristics of 100V withstand voltage, 135A maximum drain current and low drain-source on-resistance. The device is suitable for applications requiring high voltage and high current, and is particularly suitable for compact design and high-density integration applications.

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产品参数:

Product model: VBGQA1103
Brand: VBsemi
parameter:
- Type: Single N
- VDS (withstand voltage): 100V
- VGS (gate-source voltage, positive and negative): ㊣20V
- Vth (gate threshold voltage): 3V
- Drain-source on-resistance (m次) when VGS=10V: 3.45
- Maximum drain current (ID): 135A
- Technology: SGT (Smart Grid Technology)
- Package: DFN8(5X6)

领域和模块应用:

for example:
1. Smart grid system: VBGQA1103 can be used in the power transmission and distribution module in the smart grid system to realize intelligent monitoring and regulation control of the power grid and improve the stability and security of the power grid.
2. New energy charging piles: In new energy charging piles, VBGQA1103 can be used as a power switching device in the charging control module to support fast charging and intelligent management functions.
3. Industrial automation equipment: used in industrial automation equipment, VBGQA1103 can be used in motor drive modules and power management modules to achieve efficient energy conversion and intelligent control of equipment.
4. Automotive electronic systems: In automotive electronic systems, VBGQA1103 can be used in vehicle chargers and electric vehicle drive control modules to provide stable power output and reliable power drive.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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