产品参数:
parameter:
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=4.5V: 26m次
- Drain-source on-resistance (m次) at VGS=10V: 21m次
- Drain current (ID): 30A
- Technology: SGT (Silicon-Germanium Trench)
-Package: DFN8(5X6)
领域和模块应用:
for example:
1. Automotive electronic modules:
VBGQA1102N is suitable for power management, power transmission and motor control systems in automotive electronic modules. Its high performance and reliability can ensure the stable operation of automotive electronic equipment while improving the car's energy efficiency and driving experience.
2. Wireless communication equipment module:
In wireless communication equipment modules, VBGQA1102N can be used as a power amplifier and switch controller to achieve signal amplification and processing. Its low on-resistance and high frequency response characteristics can provide stable signal transmission and efficient energy conversion, meeting the high performance and reliability requirements of wireless communication equipment.
3. Industrial automation module:
In industrial automation control systems, VBGQA1102N can be used in motor drive, power inverter and current control applications. Its high drain current and low on-resistance can achieve high-efficiency power conversion and precise current control, improving the efficiency and stability of industrial production.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性