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VBGP1805 产品详细

产品简介:

The VBGP1805 is a unipolar N-channel field effect transistor with a drain-source voltage of 80V and a drain current of 120A. The device uses Silicon Germanium Trench (SGT) technology and has a drain-source resistance of 4.6mΩ and a threshold voltage of 3V.

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产品参数:

Product model: VBGP1805
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): ㊣20V
- Vth (threshold voltage): 3V
- Drain-source resistance (m次) at VGS=10V: 4.6
- ID (drain current): 120A
- Technology: SGT (Silicon Germanium Trench)
Package: TO247

领域和模块应用:

Application example:
1. Industrial power supply: VBGP1805 is suitable for power modules that require high power and high reliability in the industrial field, such as industrial equipment, welding machines, CNC machine tools, etc. Its high voltage tolerance and high current capability ensure system stability and reliability.

2. Solar inverter: Since VBGP1805 has high drain current and low drain-source resistance, it is suitable for use as a power switching device in solar inverters. It can help achieve efficient conversion of DC power generated by solar panels to AC power.

3. Automotive electronics: In automotive electronic systems, VBGP1805 can be used for power management of automotive electric drive systems and power control of electric drives. It can provide stable power conversion and driving performance, suitable for applications such as electric vehicles and hybrid vehicles.

4. High-performance power module: VBGP1805 is suitable for designing high-performance power modules, such as server power supply, communication equipment power supply or medical equipment power supply. Its stable electrical performance and reliable working characteristics can meet the requirements of various applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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