产品参数:
parameter:
- MOSFET type: single N-channel
- Maximum drain-source voltage (VDS): 60V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (RDS(on)) at VGS=10V: 1.7m次
- Maximum drain current (ID): 210A
- Technology: Silicon Germanium Transistor (SGT)
-Package: TO247
领域和模块应用:
for example:
1. **Power electronic module**: VBGP1602 can be used to design various high-power power electronic modules, such as inverters, frequency converters and AC voltage regulators. Its stable characteristics and high power output make it an ideal power switching device in power electronic systems, improving system efficiency and stability.
2. **Industrial power module**: In industrial power systems, VBGP1602 can be used to design high-power industrial power modules, such as power switches and voltage regulators. Its stable characteristics and high power output can ensure stable power supply for industrial equipment and improve the operating efficiency and reliability of the equipment.
3. **Electric vehicle drive module**: VBGP1602 can be used to design power switching devices in the drive system of electric vehicles to achieve efficient energy consumption management and power output of electric vehicles. Its high drain current and low drain resistance provide sufficient power output to meet the power needs of electric vehicles when driving at high speeds and climbing hills.
4. **Solar Inverter Module**: In solar power generation systems, VBGP1602 can be used as a key component of solar inverter modules to achieve conversion and regulation of solar power. Its extremely low drain resistance and stable characteristics can improve the conversion efficiency and stability of the inverter.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性