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VBGP11507 产品详细

产品简介:

VBsemi VBGP11507 is a unipolar N-type MOSFET with a maximum drain-source voltage of 150V and a maximum drain current of 110A. Its special gate structure (SGT) design allows it to perform in high voltage and high current environments Excellent. With a threshold voltage of 3.5V and a drain-source resistance of approximately 6.8mΩ at a gate voltage of 10V, it exhibits good conduction characteristics.

VBsemi VBGP11507's wide range of applications in electric vehicles, solar energy, industrial power supplies and LED lighting, and the role it plays in these applications.

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产品参数:

**parameter:**
- Unipolar N-type MOSFET
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 6.8
- Maximum drain current (ID): 110A
- Technology: SGT (Special Gate Structure)
- Package: TO247

领域和模块应用:


**Application Introduction:**
1. **Electric vehicle driver:** VBsemi VBGP11507 is suitable for the driver module of electric vehicles. It can be used as a power switching device to control the start and stop of the motor and speed adjustment, providing efficient and reliable power output.

2. **Solar Inverter:** In solar inverter, VBsemi VBGP11507 can be used as a switching tube to convert the DC power generated by the solar panel into AC power and supply it to the household or industrial power grid.

3. **Industrial power module:** Since VBsemi VBGP11507 has high drain-source voltage and current capability, it is suitable for use in circuits such as switching power supplies, inverters and converters in industrial power modules to provide reliable power switching function.

4. **LED lighting driver:** In LED lighting drivers, VBsemi VBGP11507 can be used as a power switching device to control the brightness and lighting effects of LED lights to provide efficient lighting solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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