MOSFET

您现在的位置 > 首页 > MOSFET

VBGP11307 产品详细

产品简介:

The VBGP11307 is a single N-type power FET suitable for a variety of applications. Its key features include high rated drain-source voltage and rated drain current, as well as low threshold voltage and drain-source resistance. This gives it excellent performance and reliability in a variety of power applications.

文件下载

下载PDF 文档
立即下载

产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 120V
- Nominal gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 7
- Rated drain current (ID): 110A
- Technology: SGT
Package: TO247

领域和模块应用:


for example:
1. Industrial power module: Due to its high voltage and high current characteristics, VBGP11307 can be used in switching power supplies, inverters and frequency converters in industrial power modules to provide stable and reliable power output.
2. Electric vehicle electronic control module: The high voltage and high current capabilities of VBGP11307 make it an ideal choice in electric vehicle electronic control module for controlling motor drive and battery management to achieve efficient energy consumption and sustainability.
3. Solar inverter: In solar inverters, VBGP11307 can be used as a key power switching device to convert solar power into usable AC power, thus promoting the utilization and development of renewable energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询