产品参数:
parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) when gate-source voltage is 10V: 102m次
- Drain current (ID): 15A
- Technology: Slope Gate Structure (SGT)
-Package: TO220F
领域和模块应用:
The following are some areas and corresponding modules that this product is applicable to:
1. Automotive electronic modules:
VBGMB12501M can be used in the design of automotive electronic modules, such as electric vehicle controllers, battery management systems and vehicle chargers. Its high drain-source voltage and low on-resistance enable efficient energy conversion and electric drive control in automotive electronic systems, improving vehicle performance and energy efficiency.
2. Industrial power module:
In industrial power systems, VBGMB12501M can be used as a key component of various industrial power modules, such as DC power supply, switching power supply and UPS power supply. Its stability and reliability make it an important part of industrial control systems, which can be used to provide stable power supply and ensure the normal operation of industrial equipment.
3. LED lighting module:
As part of an LED lighting system, VBGMB12501M can be used to design LED driver modules and lighting controllers. Its low threshold voltage and low on-resistance enable efficient driving and dimming control of LED lamps, providing stable and energy-saving lighting solutions for indoor and outdoor LED lighting applications.
4. Solar inverter module:
In solar power generation systems, VBGMB12501M can be used to design solar inverters and power converters. Its high drain-source voltage and ramp gate structure technology enables efficient conversion and stable output of solar energy. It is suitable for residential and commercial solar power generation systems and helps improve solar power generation efficiency and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性