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VBGMB1207N 产品详细

产品简介:

VBGMB1207N is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device has the following detailed parameters:

- VDS(V): 200V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 68mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 20A - Drain current
- Technology: SGT - Manufactured using SGT technology
- Package: TO220F - TO220F package type

VBGMB1207N MOSFET is suitable for applications requiring high performance, high power and efficient energy conversion, including power modules, industrial control modules and electric vehicle modules.

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产品参数:

Product model: VBGMB1207N
Brand: VBsemi
Parameters: Single N
VDS(V): 200
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 68
ID(A): 20
Technology: SGT
Package: TO220F

领域和模块应用:

Application introduction:

VBGMB1207N is suitable for a variety of fields and modules, such as:

1. Power module: Due to its high drain-source voltage (200V) and high drain current (20A) capability, VBGMB1207N is suitable for power modules such as switching power supplies, inverters and DC-DC converters. Its low on-resistance (68mΩ) and efficient technology enable efficient energy conversion.

2. Industrial control module: The high performance and reliability of this device make it an ideal choice for industrial control modules, such as industrial automation, robot control and motion control systems. Its stable characteristics and fast switching speed enable stable operation in demanding industrial environments.

3. Electric vehicle (EV) module: VBGMB1207N is suitable for power electronic modules of electric vehicles, such as electric vehicle drives, chargers and battery management systems. Its high voltage and current handling capabilities and low on-resistance can meet the requirements of electric vehicles for efficient energy conversion and long-term stability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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