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VBGMB1107 产品详细

产品简介:


- **Single N**: Single N-channel field effect transistor.
- **VDS(V)**: Maximum drain-source voltage is 100V.
- **VGS(±V)**: Gate-source voltage is ±20V.
- **Vth(V)**: Threshold voltage is 2.5V.
- **VGS=10V(mΩ)**: When the gate-source voltage is 10V, the on-resistance in the on state is 8.1mΩ.
- **ID (A)**: Maximum drain current is 45A.
- **Technology**: Made with SGT (Super-Grain Technology) technology.
- **Package**: Use TO220F package.

VBGMB1107 field effect transistor is suitable for applications requiring high performance and high reliability, including module design in power modules, industrial control and power tools.

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产品参数:

parameter:
-Single N
- VDS(V): 100
-VGS(㊣V): 20
-Vth(V): 2.5
- VGS=10V(m次): 8.1
-ID(A): 45
- Technology: SGT
Package: TO220F

领域和模块应用:

Application Introduction:
VBGMB1107 is a high-performance field effect transistor, suitable for a variety of fields and modules, with the following characteristics:
1. **Power Module**: Due to its high drain-source voltage and drain current capability, VBGMB1107 can be used to design and manufacture power modules such as power amplifiers, switching power supplies, and DC-DC converters to achieve high efficiency electrical energy conversion and power supply functions.
2. **Industrial Control**: In the field of industrial control, power switching devices with high reliability and high efficiency are needed to achieve precise control and regulation. The performance characteristics of the VBGMB1107 make it ideal for use in equipment such as industrial power supplies, motor drives, and programmable logic controllers (PLCs).
3. **Power Tools**: In power tools, power devices that can provide stable and reliable power output are needed to drive electric motors. VBGMB1107 is suitable for designing and manufacturing various power tools, such as electric drills, electric saws, etc., to achieve efficient work performance.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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