产品参数:
Detailed parameter description:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 9.4m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 7.6m次
- Quiescent drain current (ID): -80A
领域和模块应用:
Application introduction:
VBGM2606 is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Power management module: This MOSFET can be used in power switches in power management modules, such as DC-DC converters, switching power supplies, etc., to provide stable and reliable power output.
2. Electric vehicles: In electric vehicles, VBGM2606 can be used in battery management systems and motor control modules to ensure high efficiency and drive control of electric vehicles.
3. Aerospace: Suitable for power management and power control modules in the aerospace field, such as satellite power systems, avionics equipment, etc., to ensure system reliability and safety.
4. Industrial high-frequency switching power supply: This MOSFET can be used in the power switch module in industrial high-frequency switching power supply to achieve efficient power conversion and stable output power.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性