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VBGM11505 产品详细

产品简介:

VBGM11505 is a unipolar N-type field effect transistor with a drain-source voltage (VDS) of 150V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 3.5V. When the gate-source voltage is 10V, its on-resistance is 5.8mΩ and the maximum drain current (ID) is 140A. It adopts SGT technology and is packaged in TO220.

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产品参数:

parameter:
- Unipolar N type
- VDS(V): 150
-VGS(㊣V): 20
-Vth(V): 3.5
- On-resistance (m次) at VGS=10V: 5.8
-ID(A): 140
- Technology: SGT
Package: TO220

领域和模块应用:

This product is suitable for various fields and modules, as follows:

1. Power module: VBGM11505 has high drain-source voltage and drain current, and can be used to design various stable and reliable power modules, such as industrial power supplies, UPS power supplies, etc.

2. Motor driver: Due to its high on-current and low on-resistance, VBGM11505 can be widely used in motor drivers, including DC motor drivers, stepper motor drivers, etc.

3. Inverter module: In the inverter module, VBGM11505 can be used to control medium-power inverter circuits, such as household inverters, solar inverters, etc., to achieve DC to AC conversion.

4. Automotive electronic modules: Due to its higher voltage and current characteristics, VBGM11505 can be used in automotive electronic modules, such as vehicle power control modules, electric vehicle drivers, etc., to provide reliable power control and management functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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