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VBGM11206 产品详细

产品简介:

VBGM11206 is a single-channel N-type field effect transistor with the following characteristics and is suitable for specific application scenarios.

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产品参数:


parameter:
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 120V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.3V
- Drain-source resistance (m次) at VGS=10V: 6.6
- Maximum drain current (ID): 108A
- Technology: Sputter Channel
Package: TO220

领域和模块应用:


Example 1: Suitable for electric vehicle driver module
Due to its high drain current capacity and low drain-source resistance, the VBGM11206 is suitable for use as a power switching device in electric vehicle driver modules. In the electric vehicle driver module, it can be used for motor control and battery management of electric vehicles to ensure efficient operation and safety of electric vehicles.

Example 2: Applicable to industrial control module
The VBGM11206 package is high temperature resistant and is suitable for power switching devices in industrial control modules. In industrial control modules, it can be used in motor drives, frequency converters, UPS systems and other applications to achieve efficient operation and reliability of industrial equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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