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VBGM11203 产品详细

产品简介:


This product is suitable for single N-type transistors, has a nominal drain-source voltage of 120V, and is capable of operating with a gate-source voltage of ±20V. Its threshold voltage is 3V and the drain-source resistance is 3.5mΩ at VGS=10V. Maximum drain current is 120A. Using SGT technology, the package is TO220.

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产品参数:

parameter:
- Transistor Type: Single N
- Rated drain-source voltage (VDS): 120V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 3.5
- Maximum drain current (ID): 120A
- Technology: SGT (Single Gate Transistor, single gate transistor)
Package: TO220

领域和模块应用:

**Application Introduction and Examples**:

1. **Power module**: Due to its high drain-source voltage and current characteristics, VBGM11203 can be used in power switching circuits in power modules. For example, it can be used in DC voltage regulators, power inverters and other equipment.

2. **Electric vehicle controller**: This transistor is suitable for the drive circuit in the electric vehicle controller. Its high drain-source voltage and current meet the power needs of electric vehicles, while its low drain-source resistance improves system efficiency.

3. **Industrial electronic equipment**: In the industrial field, VBGM11203 can be used in power switching circuits in various industrial electronic equipment, such as frequency converters, welding machines, UPS, etc., to achieve efficient energy conversion and power control.

4. **Solar Inverter**: Since this transistor has high rated voltage and current characteristics, it is suitable for the DC-AC conversion circuit in the solar inverter to convert the output power of the solar panel into AC power for supply to the grid or Load usage.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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