- **Single N**: Single N-channel field effect transistor.
- **VDS(V)**: Maximum drain-source voltage is 100V.
- **VGS(±V)**: Gate-source voltage is ±20V.
- **Vth(V)**: Threshold voltage is 3V.
- **VGS=10V(mΩ)**: When the gate-source voltage is 10V, the on-resistance in the on state is 3mΩ.
- **ID (A)**: Maximum drain current is 180A.
- **Technology**: Made with SGT (Super-Grain Technology) technology.
- **Package**: Use TO263-7L package.
The VBGL7103 field effect transistor is suitable for applications requiring high voltage, high current and high efficiency capabilities, including module designs in areas such as electric vehicles, industrial high voltage applications and solar inverters.
Product model: VBGL7103
Brand: VBsemi
parameter:
-Single N
- VDS(V): 100
-VGS(㊣V): 20
-Vth(V): 3
- VGS=10V(m次): 3
-ID(A): 180
- Technology: SGT
Package: TO263-7L
Application Introduction:
VBGL7103 is a high-performance field effect transistor, suitable for a variety of fields and modules, with the following characteristics:
1. **Electric Vehicles**: Due to its high voltage, high current and low on-resistance, VBGL7103 is very suitable for power modules of electric vehicles, such as motor drivers and electric vehicle controllers, enabling efficient electric vehicle drive systems .
2. **Industrial high-voltage applications**: In industrial high-voltage applications, power switching devices that can withstand high voltages and large currents are needed to achieve power conversion and high-voltage equipment control. The performance characteristics of the VBGL7103 make it an ideal choice for industrial high-voltage power modules and frequency converters.
3. **Solar Inverter**: In a solar inverter, efficient and highly reliable power switching devices are needed to convert the DC power generated by the solar panels into AC power. VBGL7103 can be used to design and manufacture power modules of solar inverters to achieve efficient utilization of solar energy.
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