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VBGL1121N 产品详细

产品简介:

VBGL1121N is a high-performance single N-channel MOSFET suitable for various power supply and power management applications, including power inverters, electric vehicles and industrial automation control, etc., and has a wide range of application prospects. It has the characteristics of low drain-source on-resistance, high drain current and wide operating voltage range, making it widely used in a variety of fields and modules.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 120V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=10V: 8.3m次
- Drain current (ID): 70A
- Technology: SGT (Silicon-Germanium Trench)
-Package:TO263

领域和模块应用:

for example:
1. Power inverter module:
VBGL1121N is suitable for power inverter modules such as solar inverters, grid inverters and UPS (uninterruptible power supply). Its high rated voltage and large drain current can adapt to power inverter systems of different sizes and ensure high performance and reliability.

2. Electric vehicle drive module:
In the drive modules of electric vehicles and hybrid vehicles, VBGL1121N can be used as a power switching device to control and drive the electric motor. Its high drain current and low on-resistance can provide stable current output and ensure the safety and efficiency of electric vehicles.

3. Industrial automation control module:
In industrial automation control systems, VBGL1121N can be used in motor drive, power inverter and power conditioning applications. Its high performance and reliability can improve the efficiency and stability of industrial production and meet the needs of industrial production for high quality and high efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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