产品参数:
Parameter Description:
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 120V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 2.8
- Maximum drain current (ID): 190A
- Technology: SGT (Silicon Gate Technology)
-Package:TO263
领域和模块应用:
Its features include high drain-source voltage and drain current, as well as low threshold voltage and drain-source resistance, making it suitable for a wide range of applications in the following fields and modules:
1. Power module: VBGL11203 is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high voltage and current characteristics ensure efficient and stable operation of the module, while low threshold voltage and drain-source resistance reduce power consumption and losses.
2. Electric vehicle electronic control module: In the electric vehicle electronic control module, VBGL11203 can be used to control motor drive, battery management, charging management and other parts. Its high current and voltage capabilities can meet the high power and performance needs of electric vehicles while maintaining system stability and safety.
3. Industrial control module: In the field of industrial control, VBGL11203 can be used to control switches, motor drives, power management and power regulation modules. Its reliable performance and high power processing capabilities make it an important part of industrial control systems, improving system reliability and efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性