产品参数:
parameter:
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- On-resistance (m次) when gate-source voltage is 4.5V: 23m次
- On-resistance (m次) when gate-source voltage is 10V: 19.2m次
- Maximum drain current (ID): 9.5A
- Technical features: Surface Grid Grooves (SGT)
Package: SOT223
领域和模块应用:
details as follows:
1. **Portable Electronic Devices**:
Because the VBGJ1102N has a compact package and low drain current, it is suitable for use as power management modules in portable electronic devices, such as laptops, tablets, and smartphones, to provide efficient power management and energy-saving functions.
2. **LED lighting**:
In the field of LED lighting, this product can be used as a power switch for LED driver modules to control the brightness and efficiency of LED lights and provide reliable power supply.
3. **Industrial Control**:
In industrial control systems, VBGJ1102N can be used in various power electronic modules such as frequency converters, AC motor drives and power inverters to achieve efficient energy conversion and precise power control.
4. **Automotive Electronics**:
Due to its high voltage and current characteristics, this product is also suitable for automotive electronic modules, such as power switches in automotive power management, automotive lighting and automotive entertainment systems, to meet the needs of automotive electronic systems for efficient energy conversion and stable performance.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性