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VBGE2305 产品详细

产品简介:

VBsemi's VBGE2305 is a single P-channel field effect transistor (FET). It is packaged in TO252.

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产品参数:

**Detailed parameter description:**

- Rated drain-source voltage (VDS): -30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2.5V
- Drain-source resistance (m次) at VGS=4.5V: 7.4
- Drain-source resistance (m次) at VGS=10V: 5.1
- Maximum drain current (ID): -90A
- Technology: SGT
-Package:TO252

领域和模块应用:

VBGE2305 is suitable for a variety of fields and modules, such as:

In the power management module, VBGE2305 can be used as a power switching device in switching power supplies. Due to its high rated drain-source voltage and large drain current, as well as its relatively low drain-source resistance, it is able to withstand large currents and has low on-resistance, making it suitable for applications requiring high efficiency and Low loss power conversion circuit.

In the motor drive module, VBGE2305 can be used in circuits that drive DC motors or stepper motors. Its high rated drain-source voltage and large drain current enable it to withstand higher voltages and currents, while its relatively low drain-source resistance ensures low conduction losses and high efficiency .

In lighting control modules, VBGE2305 can be used as power switching devices in LED drive circuits. Its high rated drain-source voltage and small drain resistance enable adequate power output, and its relatively low threshold voltage enables good performance under low-voltage driving.

In the power inverter module, VBGE2305 can be used as a switching tube in the inverter circuit. Its high rated drain-source voltage and large drain current enable it to withstand higher voltages and currents, while its smaller drain-source resistance and SGT technology ensure lower conduction losses and High efficiency inverter operation.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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