产品简介:
VBGE1256N is a single-channel N-type MOSFET produced by VBsemi Company with high performance and reliability. Features include a drain-source voltage of 250V, a gate-source voltage of ±20V (max), and a threshold voltage of 3.5V. It adopts basic insulated gate type (SGT), has low on-resistance and a maximum drain current of 25A, and is suitable for various high-voltage and high-current application scenarios. As a high-performance, highly reliable single-channel N-type MOSFET, it is suitable for various modules in power modules, power tools, chargers and inverters, LED lighting and other fields.
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