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VBGE1156N 产品详细

产品简介:

VBGE1156N is a single N-type power field effect transistor launched by the VBsemi brand. It is manufactured using SGT technology and is suitable for various medium and low power power applications. The product features suitable drain-source voltage and drain current, as well as low threshold voltage and drain-source resistance, to meet a variety of application needs.

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产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 150V
- Nominal gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 59
- Rated drain current (ID): 20A
- Technology: SGT
Package: TO252

领域和模块应用:

for example:
1. Power adapter module: Due to its medium and low power characteristics, VBGE1156N is suitable for switching power supplies and voltage stabilizing circuits in power adapter modules to provide reliable power output and support the use of various household electronic products.
2. Industrial control module: In the field of industrial control, VBGE1156N can be used in PLC (programmable logic controller) modules and drive circuits to achieve precise control and stable operation of various automated production equipment.
3. LED lighting driver module: VBGE1156N can be used in LED lighting driver modules to control the current and brightness of LED lamp beads, provide efficient lighting effects and long-term stability, and is suitable for various indoor and outdoor lighting occasions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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