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VBGE1152N 产品详细

产品简介:

VBsemi VBGE1152N is a unipolar N-type MOSFET with a maximum drain-source voltage of 150V and a maximum drain current of 45A. Its special gate structure (SGT) design allows it to perform in high voltage and high current environments Excellent. With a threshold voltage of 3V and a drain-source resistance of approximately 24mΩ at a gate voltage of 10V, it exhibits good turn-on characteristics.

VBsemi VBGE1152N is widely used in power tools, solar energy, power management and LED lighting, and the role it plays in these applications.

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产品参数:

**parameter:**
- Unipolar N-type MOSFET
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 24
- Maximum drain current (ID): 45A
- Technology: SGT (Special Gate Structure)
- Package: TO252

领域和模块应用:


**Application Introduction:**
1. **Power tool module:** VBsemi VBGE1152N is suitable for use in power tool modules and can be used as a power switching device to control the start, stop and power adjustment of power tools, providing efficient and reliable power output.

2. **Solar charge controller:** In the solar charge controller, VBsemi VBGE1152N can be used as a power switching device to control the charging current and battery charging and discharging process to ensure the stable operation of the solar charging system.

3. **Power management module:** Since VBsemi VBGE1152N has high drain-source voltage and current capabilities, it is suitable for use in circuits such as switching power supplies, inverters and converters in power management modules to provide reliable power switching function.

4. **LED lighting driver:** In LED lighting drivers, VBsemi VBGE1152N can be used as a power switching device to control the brightness and lighting effects of LED lights to provide efficient lighting solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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