产品简介：
VBsemi's VBGE1105 is a Single N-type field effect transistor (FET) with the following key parameters:
- Maximum drain-source voltage (VDS) is 100V, suitable for medium voltage applications.
- The maximum gate-source voltage (VGS) is plus or minus 20V, with high voltage tolerance.
- The gate threshold voltage (Vth) is 3V, indicating that the device has a lower gate voltage.
- The on-resistance at VGS=4.5V is 7.7mΩ, and the on-resistance at VGS=10V is 6mΩ, showing lower on-resistance.
- Maximum drain current (ID) is 85A, with moderate current handling capability.
- Using SGT (Superjunction Gate Trench) technology, it has lower on-resistance and higher performance.
- The package is TO252, suitable for surface mount technology.
VBGE1105 is suitable for various applications requiring medium voltage, medium current and low on-resistance, providing reliable power switching solutions for modules in different fields.
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领域和模块应用：
Application Introduction:
VBGE1105 is suitable for a variety of fields and modules, including but not limited to:
1. **Power module**: Due to its low on-resistance and moderate current carrying capacity, VBGE1105 can be used in power switching devices in power modules, such as switching power supplies, inverters and voltage regulators, to provide efficient Power switching solutions.
2. **Power Tools**: This device has low on-resistance and moderate current carrying capacity, and is suitable for use in power switching circuits in power tool modules, such as electric drills, electric saws, etc., to provide stable and efficient Power control.
3. **Electric vehicle charging pile**: VBGE1105 can also be used in the power switching circuit in the electric vehicle charging pile module to provide a reliable charging solution.
4. **LED Lighting**: Due to its stability and reliability, VBGE1105 can be used in power switching circuits in LED lighting modules to provide efficient LED lighting solutions.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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