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VBGA1156N 产品详细

产品简介:

VBGA1156N is a unipolar N-type field effect transistor with a drain-source voltage (VDS) of 150V, a gate-source voltage (VGS) of 20V, and a threshold voltage (Vth) of 3V. When the gate-source voltage is 10V, its on-resistance is 55mΩ and the maximum drain current (ID) is 5A. It adopts SGT technology and is packaged as SOP8.

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产品参数:

Product model: VBGA1156N
Brand: VBsemi
parameter:
- Unipolar N type
- VDS(V): 150
-VGS(㊣V): 20
-Vth(V): 3
- On-resistance (m次) at VGS=10V: 55
-ID(A): 5
- Technology: SGT
Package: SOP8

领域和模块应用:

This product is suitable for various fields and modules, as follows:

1. Low-power electronic modules: Since VBGA1156N has lower drain current and higher drain-source voltage, it can be used to design low-power electronic modules, such as sensor interface modules, embedded systems, etc.

2. Power management module: The low power consumption characteristics of VBGA1156N make it suitable for some power management modules with lower power consumption, such as small battery charging management, low power DC-DC converters, etc.

3. LED driver module: In the LED driver module, VBGA1156N can be used to control low-power LED strips, LED bulbs, etc., to provide stable current output.

4. Consumer electronics: Due to its low power consumption and small package, VBGA1156N can be applied to various consumer electronics, such as smart home devices, smart watches, smartphones, etc., to provide reliable power control and management functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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