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VBFB2610N 产品详细

产品简介:

The VBsemi brand VBFB2610N is a single P-type Trench technology MOSFET, packaged in TO251. It is suitable for various fields and modules such as power management, electric vehicles, LED lighting and industrial control equipment, providing high-performance power switching solutions for various application scenarios.

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产品参数:

Detailed parameter description:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 80m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 66m次
- Quiescent drain current (ID): -20A

领域和模块应用:

VBFB2610N is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Power management module: This MOSFET can be used in power switches in power management modules, such as DC-DC converters, switching power supplies, etc., to provide stable and reliable power output.
2. Electric vehicles: In electric vehicles, VBFB2610N can be used in battery management systems and motor control modules to ensure high efficiency and drive control of electric vehicles.
3. LED lighting system: Suitable for power switch modules in LED lighting systems, such as LED drivers, lighting controllers, etc., to achieve high-efficiency and adjustable lighting.
4. Industrial control equipment: This MOSFET can be used in power switches and drive control modules in industrial control equipment, such as frequency converters, servo drives, etc., to improve the efficiency and reliability of the system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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