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VBFB2309 产品详细

产品简介:

VBFB2309 is a single-channel P-type field effect transistor with excellent performance. It is manufactured using channel process technology and has excellent performance and stability. Its low threshold voltage and low drain-source resistance make it excellent in a variety of circuit applications.

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产品参数:

**VBFB2309**

**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -2.5V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 11m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 8m次
- **ID (A):** Drain current: -70A
- **Technology:** Channel process
- **Package:** TO251

领域和模块应用:

**Applicable areas and module examples:**
1. **Power Management Module:** VBFB2309 is suitable for overload protection and reverse polarity protection circuits in power management modules. Its low drain-source resistance and high drain current enable it to handle high power currents efficiently, protecting circuits from overload and reverse voltage damage.

2. **Electric vehicle control module:** In the electric vehicle control module, VBFB2309 can be used to drive the power switch in the motor control circuit. Its high drain current and low drain-source resistance enable it to quickly and stably regulate the motor's power output, improving the performance and efficiency of electric vehicles.

3. **Industrial Automation Module:** In the industrial automation module, VBFB2309 can be used to control the switching circuits of high-power equipment such as solenoid valves and actuators. Its stable performance and high drain current enable it to reliably control various industrial equipment, improving production efficiency and safety.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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