产品参数:
**VBFB2309**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -2.5V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 11m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 8m次
- **ID (A):** Drain current: -70A
- **Technology:** Channel process
- **Package:** TO251
领域和模块应用:
**Applicable areas and module examples:**
1. **Power Management Module:** VBFB2309 is suitable for overload protection and reverse polarity protection circuits in power management modules. Its low drain-source resistance and high drain current enable it to handle high power currents efficiently, protecting circuits from overload and reverse voltage damage.
2. **Electric vehicle control module:** In the electric vehicle control module, VBFB2309 can be used to drive the power switch in the motor control circuit. Its high drain current and low drain-source resistance enable it to quickly and stably regulate the motor's power output, improving the performance and efficiency of electric vehicles.
3. **Industrial Automation Module:** In the industrial automation module, VBFB2309 can be used to control the switching circuits of high-power equipment such as solenoid valves and actuators. Its stable performance and high drain current enable it to reliably control various industrial equipment, improving production efficiency and safety.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性