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VBFB19R11S 产品详细

产品简介:

Product introduction:
VBFB19R11S is a single N-channel MOSFET of the VBsemi brand, using SJ_Multi-EPI technology and packaged in TO251. The product features a drain-source voltage (VDS) of 900V, is capable of withstanding a gate-source voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V. When VGS=10V, it has an on-resistance of 580mΩ. Rated drain current (ID) is 11A, making it suitable for a variety of industrial and electronic applications.

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产品参数:

Detailed parameter description:
- Product model: VBFB19R11S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 580m次
- Rated drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO251

领域和模块应用:




Examples of applicable fields and modules:
1. Power module: Since VBFB19R11S has a high drain voltage and low on-resistance, it is suitable for switching power supplies, inverters and converters in power modules, and can be used in industrial control and power supply fields.
2. LED lighting control: In LED lighting systems, power switching devices need to withstand high voltage and current. VBFB19R11S can be used for switch control in LED drive circuits to achieve efficient power supply and brightness adjustment of LED lights.
3. Solar inverter: VBFB19R11S can be used as a key component of solar photovoltaic inverter to help achieve efficient conversion of solar energy and access to the power grid, and promote the utilization and promotion of renewable energy.
4. Industrial electric equipment: In industrial electric equipment, power switching devices need to withstand high voltage and current. VBFB19R11S can be used for motor drive and power management to help achieve efficient operation and automated control of industrial equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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