产品参数:
Detailed parameter description:
- Product model: VBFB18R11S
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 500 m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO251
领域和模块应用:
Examples of applicable fields and modules:
VBFB18R11S MOSFET is suitable for a variety of fields and modules. The following are some typical application scenarios:
1. Electric vehicle power management: suitable for electric vehicle chargers, battery management systems, and motor drivers to achieve high-efficiency power management and power output control of electric vehicles.
2. Industrial power electronics: It can be used in frequency converters, power regulators and power factor correctors in industry to realize the control and regulation of power systems.
3. Solar inverter: used in inverters and power management modules in solar power generation systems to convert DC power collected by solar panels into AC power.
4. Power supply module: Can be applied to various power supply modules, such as switching power supplies, UPS systems and chargers, etc., to achieve stable and reliable power output.
5. LED lighting driver: suitable for drive circuits in LED lighting systems, used to adjust the brightness and color temperature of LED lights.
The above are some typical application scenarios of VBFB18R11S MOSFET. Its characteristics make it have wide application potential in high voltage and high current control applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性