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VBFB18R06SE 产品详细

产品简介:

Product introduction:

VBsemi's VBFB18R06SE is a Single N-type field effect transistor manufactured using SJ_Deep-Trench technology. It features a drain-to-source voltage (VDS) of up to 800V and supports a maximum gate-source voltage (VGS) of 30V. In addition, it has a gate threshold voltage (Vth) of 3.5V, an on-resistance of 750mΩ at a drain-source voltage of 10V, and a maximum drain current (ID) of 6A. This product is packaged as TO251.

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产品参数:

Detailed parameter description:

- Model: VBFB18R06SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Deep-Trench
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 750m次
- Maximum drain current (ID): 6A
-Package:TO251

领域和模块应用:

Applicable areas and modules:

This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and low on-resistance, it is suitable for designing high-voltage power switching circuits.
2. Electric vehicle charger: Its high drain-source voltage and large drain current make it a key component in electric vehicle chargers, capable of withstanding high voltages and currents.
3. Industrial control system: It can be used in power switching circuits in industrial control systems to achieve precise electrical control.
4. LED lighting driver: By controlling the current of the LED lamp, high-efficiency power regulation can be achieved in the LED lighting driver.

These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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