产品参数:
Detailed parameter description:
- Model: VBFB18R06SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Deep-Trench
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 750m次
- Maximum drain current (ID): 6A
-Package:TO251
领域和模块应用:
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and low on-resistance, it is suitable for designing high-voltage power switching circuits.
2. Electric vehicle charger: Its high drain-source voltage and large drain current make it a key component in electric vehicle chargers, capable of withstanding high voltages and currents.
3. Industrial control system: It can be used in power switching circuits in industrial control systems to achieve precise electrical control.
4. LED lighting driver: By controlling the current of the LED lamp, high-efficiency power regulation can be achieved in the LED lighting driver.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性