产品参数:
Detailed parameter description:
- Model: VBFB18R06S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: TO251
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 850
- Maximum drain current (ID): 6A
- Technology: SJ_Multi-EPI
领域和模块应用:
Examples of application areas:
1. Power inverter module: VBFB18R06S has a drain-source voltage of 800V and a maximum drain current of 6A. It is suitable for use in power inverter modules and can help convert DC power into AC power to achieve effective utilization of electrical energy.
2. Wind energy converter: Due to its stable performance and high withstand voltage characteristics, this product can be used in wind energy converter modules to help control and regulate the output current of wind energy power generation systems.
3. High-voltage DC transmission system: VBFB18R06S is suitable for high-voltage DC transmission systems. It can control the current and voltage of the transmission system stably and reliably to ensure the safe transmission of electric energy.
4. Medical equipment: This product can also be used in medical equipment modules, such as X-ray machines, nuclear magnetic resonance machines, etc., to help achieve stable operation and precise control of equipment.
The above examples illustrate the applicability of the VBFB18R06S product in the fields of power inverters, wind energy converters, high-voltage DC transmission systems and medical equipment, demonstrating its broad application prospects and potential.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性