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VBFB18R05SE 产品详细

产品简介:

Product introduction:

VBFB18R05SE is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Deep-Trench technology and is packaged as TO251. This product has high performance and reliability and is suitable for various application scenarios.

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产品参数:

Detailed parameter description:

- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 1000m次
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package:TO251

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial power modules: Due to its high drain-source voltage and low on-resistance, VBFB18R05SE can be used in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charging piles: With high drain-source voltage and high on-resistance, it is suitable for power switches and control circuits in electric vehicle charging piles.
3. Solar inverter: suitable for power switches and DC-AC converters in solar inverters to achieve effective utilization of solar energy.
4. LED lighting: In LED lighting applications, VBFB18R05SE can be used for power switching and dimming control in LED drive circuits.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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