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VBFB18R02S 产品详细

产品简介:

1. Product introduction:
The VBsemi brand VBFB18R02S model is a single N-channel MOSFET power device. The device has a drain-to-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 2A. Using SJ_Multi-EPI technology, the package is TO251.

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产品参数:

2. Detailed parameter description:
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) when gate-source voltage is 10V: 2600
- Drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package: TO251

领域和模块应用:



3. Examples of application areas:
1. Industrial power module: Since VBFB18R02S has a drain-source voltage of 800V and a drain current of 2A, it is suitable for power switches and regulators in industrial power modules.
2. Solar Inverters: The high voltage and current capabilities of this device make it ideal for power conversion and power control in solar inverters.
3. Electric vehicle charging piles: The high-performance characteristics of VBFB18R02S make it suitable for power switches and current controllers in electric vehicle charging piles to ensure the stability and efficiency of the charging process.
4. LED lighting system: As a high-voltage MOSFET device, VBFB18R02S can be used for power adjustment and switching in LED lighting systems to improve the energy efficiency and stability of the system.

The above are some application examples of VBFB18R02S products in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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