产品参数:
**Product model:** VBFB1806
**Brand:** VBsemi
**parameter:**
- **Single N**: Single channel N-type MOSFET
- **VDS(V)**: Saturated drain-source voltage 80V
- **VGS(㊣V)**: Standard gate-source voltage range ㊣20V
- **Vth(V)**: Threshold voltage 3V
- **VGS=4.5V(m次)**: drain-source on-resistance 9m次 when gate-source voltage is 4.5V
- **VGS=10V(m次)**: drain-source on-resistance 6m次 when gate-source voltage is 10V
- **ID (A)**: Maximum drain current 75A
- **Technology:** Trench channel technology
- **Package:** TO251
领域和模块应用:
**Application introduction and examples:**
1. **Power module application:**
Since VBFB1806 has high saturation drain-source voltage and drain current capabilities, it is suitable for use in switching circuits in power modules. For example, it can be used as a power switching device in switching power supplies to provide stable power output with low conduction losses, making the power module highly efficient and reliable.
2. **Motor driver application:**
In the motor driver, VBFB1806 can be used as a switching device in the motor control circuit to control the start, stop and speed adjustment of the motor. Its high drain current capability and low on-resistance ensure that the motor driver has high power density and response speed, and is suitable for various motor drive applications, such as electric vehicle control, industrial machinery drive, etc.
3. **Power management module application:**
In the power management module, VBFB1806 can be used as a key device in power switches, voltage regulators and other circuits to achieve power management and stable output. Its high saturation drain-source voltage and low on-resistance characteristics help improve the efficiency and stability of the power management module, and are suitable for the power management needs of various electronic devices, such as notebook computers, communication equipment, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性