产品简介:
Product introduction:
VBsemi's VBFB17R11S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 450mΩ at VGS=10V, and a maximum Drain current (ID) is 11A. The package form is TO251.
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