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VBFB17R08SE 产品详细

产品简介:

Product introduction:

VBFB17R08SE launched by VBsemi is a Single N-type MOSFET with high performance and reliability. This product uses SJ_Deep-Trench technology, has a drain-source voltage (VDS) of 700V, a drain current (ID) of 8A, and has an on-resistance as low as 540mΩ at VGS=10V. This product is packaged in TO251 and is suitable for a variety of applications.

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产品参数:

Detailed parameter description:

- Product model: VBFB17R08SE
- Brand: VBsemi
- MOSFET type: Single N
- VDS (drain-source voltage): 700V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 540m次
- ID (drain current): 8A
- Technology: SJ_Deep-Trench
-Package:TO251

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial power module: Because VBFB17R08SE has high drain voltage and low on-resistance, it is suitable for use as a switching tube in industrial power modules to provide stable power output.
2. Electric vehicle charger: In electric vehicle chargers, MOSFETs with high voltage and high current capabilities are required. VBFB17R08SE is qualified for such applications and ensures the efficient and stable operation of the charger.
3. Solar inverter: As a key component in solar inverters, VBFB17R08SE can withstand high voltage and high current, effectively improving the conversion efficiency and stability of the inverter.
4. Power management module: In various power management modules, such as DC-DC converters and AC-DC converters, VBFB17R08SE can be used as a switching tube to achieve efficient conversion and management of power.

These fields and modules require power devices with high performance and reliability to ensure the normal operation of the system, and VBFB17R08SE is the ideal choice to meet these needs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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