产品参数：
Detailed parameter description:
- Model: VBFB17R04SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 1100m次
- Drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package:TO251
领域和模块应用：
Examples of applicable fields and modules:
1. LED lighting: Since VBFB17R04SE has a high drain-source voltage and low on-resistance, it is suitable for switching power supplies and inverters in LED lighting drive circuits to achieve high-efficiency LED lighting.
2. Low-power power supply: The product's low drain current and packaging form are suitable for low-power power modules, such as power management circuits in portable electronic devices and wireless sensor networks.
3. Automotive electronics: In the field of automotive electronics, VBFB17R04SE can be used in vehicle power converters and drivers to provide stable power supply and motor control.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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