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VBFB17R04 产品详细

产品简介:

Product Introduction: VBsemi's VBFB17R04 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V ( Vth). It adopts Plannar technology and is packaged as TO251.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, plus or minus): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 3250m次
- On-resistance when VGS=10V: 2600m次
- Maximum drain current (ID): 4A

领域和模块应用:

Examples of applicable fields and modules:
1. Power adapter: VBFB17R04 has a high drain-source voltage and moderate drain current, and is suitable for designing various types of power adapters, such as laptop chargers, mobile phone chargers, etc.
2. Lighting LED driver: In LED lighting systems, efficient power MOSFETs are required to drive LEDs. VBFB17R04 can be used to design LED drivers to provide stable current output.
3. Power tool control module: Because VBFB17R04 has a high drain-source voltage and moderate drain current, it can be used to design power control modules for power tools, such as electric drills, electric hammers, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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