产品参数:
Detailed parameter description:
- Product model: VBFB17R02
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Gate-source voltage threshold (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 4.5V: 8125m次
- On-resistance (RDS(on)) when gate-source voltage is 10V: 6500m次
- Maximum on-current (ID): 2A
-Package:TO251
领域和模块应用:
Examples of applicable fields and modules:
1. Low-voltage DC power module: The low on-resistance and low on-current of VBFB17R02 make it suitable for switching power supplies and inverter modules in low-voltage DC power modules for stable power supply of industrial and household electronic equipment.
2. Vehicle electronic systems: In automotive electronic systems, the MOSFET can be used in vehicle battery management systems, motor drive modules of electric vehicles, etc., to achieve efficient energy conversion and power control of electric vehicles.
3. Power inverter: suitable for various types of power inverters, including solar inverters, UPS inverters, etc., used to convert DC power to AC power, and used in solar power generation systems, backup power systems, etc. field.
4. Lighting driver: In the LED lighting system, VBFB17R02 can be used as a switching device in the LED driver module to realize the control and dimming functions of LED lamp beads and improve the efficiency and stability of the lighting system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性