产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBFB16R10S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 450
- Maximum drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO251
领域和模块应用:
Examples of applicable fields and modules:
1. Power module: Because VBFB16R10S has a high drain-source voltage and a large drain current, it is suitable for designing high-performance switching power supplies and inverter modules.
2. Electric vehicle charging pile: Its voltage resistance and conduction characteristics make it a key power device in electric vehicle charging piles, ensuring high efficiency and stability.
3. Industrial control systems: In industrial control systems that need to withstand high voltages and large currents, VBFB16R10S can be used as a switching device to provide reliable performance and long-term stability.
4. Solar inverter: suitable for power conversion and control circuits in solar inverters, providing high efficiency and reliability energy conversion solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性