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VBFB16R08SE 产品详细

产品简介:

Product introduction: VBsemi's VBFB16R08SE is a TO251 packaged N-channel field effect transistor, manufactured using SJ_Deep-Trench technology. It has a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 8A, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and an on-resistance (VGS) of 460mΩ. =10V). This product is suitable for low power applications.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 600V, VGS (gate-source voltage) is ㊣30V, Vth (gate threshold voltage) is 3.5V.
- Current parameters: ID (drain current) is 8A.
- Technical characteristics: Using SJ_Deep-Trench technology.
- On-resistance: 460m次 at VGS=10V.
- Package: TO251.

领域和模块应用:

Examples of applicable fields and modules:
1. Small home appliance controller: suitable for low-power home appliance controllers, such as induction cookers, microwave ovens, etc.
2. Low-power power module: used for low-power power modules, such as laptop chargers, mobile power supplies, etc.
3. Power tool driver: In low-power power tools, it can be used to drive electric screwdrivers, electric wrenches, etc.
4. Automotive electronic auxiliary modules: used as low-power auxiliary modules in automotive electronic systems, such as interior lighting, car audio, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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