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VBFB16R07S 产品详细

产品简介:

Product introduction:
VBFB16R07S is a single N-channel field effect transistor launched by the VBsemi brand. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product is manufactured using SJ_Multi-EPI technology, which is stable and reliable. The package form is TO251.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 650
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter module: Because VBFB16R07S has a high drain-source voltage and on-current, it is suitable for power inverter modules, such as UPS power supplies, inverter welding machines, etc.
2. Electric vehicle motor driver: The high voltage and high current characteristics of this product make it suitable for the power switch module in the electric vehicle motor driver to achieve efficient power output of electric vehicles.
3. Battery management system: VBFB16R07S can be used as the charge and discharge control module in the battery management system to achieve precise control and protection of the battery charge and discharge process.
4. Solar inverter: This product is suitable for power switch modules in solar inverters, which can achieve stable operation and efficient conversion of solar power generation systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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