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VBFB16R07 产品详细

产品简介:

Product introduction:
VBsemi's VBFB16R07 is a single N-channel field effect transistor suitable for a variety of power electronic applications. The device has a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 7A, and a threshold voltage (Vth) of 3.5V. Manufactured using Plannar technology and packaged in TO251, it has good heat dissipation performance and stability.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Static drain-source resistance (VGS=4.5V): 1500 m次
- Static drain-source resistance (VGS=10V): 1200 m次
- Drain current (ID): 7A
- Technology: Plannar
-Package:TO251

领域和模块应用:

Application examples:
1. Power management module: Because VBFB16R07 has high drain-source voltage and drain current capabilities, it is suitable for use in switching power supplies, inverters and other parts of the power management module.
2. Automotive electronics field: In automotive electronic systems, power devices with high stability and high voltage capabilities are required. VBFB16R07 can be used in automotive power management, drive control and other modules.
3. LED lighting driver: LED lighting products require stable current drive. VBFB16R07 can be used as a switching element in the LED driver module to provide stable current output.
4. Motor drive: In the motor control module, VBFB16R07 can be used as a motor drive device to provide efficient motor drive control.
5. Solar inverter: In the solar inverter, VBFB16R07 can be used to convert the DC power generated by the solar panel into AC power, which is suitable for the inverter part of the solar power generation system.

These fields and modules require high-performance power devices to achieve stable power supply and effective energy conversion. As a high-performance field effect transistor, VBFB16R07 has broad application prospects in these fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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