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VBFB16R04 产品详细

产品简介:

Product introduction:
VBsemi's VBFB16R04 model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using planar process technology and packaged in TO251, making it suitable for various application scenarios.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=4.5V: 1800
- Drain-source resistance (m次) at VGS=10V: 1440
- Drain current (ID): 4A
- Technology: Planar Technology

领域和模块应用:

Application example:
The product is suitable for multiple areas and modules, such as:
1. Power module: Due to its high drain-source voltage and low drain-source resistance, it can be used in switching power supplies and inverter modules.
2. Electric vehicle charger: With sufficient drain-source current and high voltage tolerance, it is suitable for the design of electric vehicle charger.
3. Industrial control systems: Due to its stability and reliability, it can be used as switching devices in industrial control systems.
4. LED lighting: By controlling current and voltage, high-efficiency power control can be achieved in LED lighting systems.

These are just some examples, actual application depends on specific design and requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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