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VBFB165R11S 产品详细

产品简介:

Product introduction:
The VBsemi branded VBFB165R11S model is a single N-channel MOSFET offering high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO251, it is suitable for various power supply and power control applications.

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产品参数:

Detailed parameter description:
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=10V, the drain-source resistance is 370m次
- Maximum drain current ID is 11A

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter: VBFB165R11S is suitable for power switch modules in power inverters, helping to improve the efficiency and stability of the inverter.
2. Automotive electronics: This MOSFET can be used in electric vehicle charging piles in automotive electronic systems, providing reliable power output and supporting fast charging of electric vehicles.
3. Solar photovoltaic system: VBFB165R11S is suitable for DC to AC inverter modules in solar photovoltaic systems, helping to improve the energy conversion efficiency of photovoltaic systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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