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VBFB165R09S 产品详细

产品简介:

Product introduction:
VBFB165R09S is a single N-channel field effect transistor launched by the VBsemi brand. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product is manufactured using SJ_Multi-EPI technology and has excellent performance and stability. The package form is TO251.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 500
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: Because VBFB165R09S has a high drain-source voltage and on-current, it is suitable for industrial power modules, such as DC regulated power supplies.
2. Electric vehicle charging piles: The high voltage and high current characteristics of this product make it suitable for switching power supply modules of electric vehicle charging piles.
3. Inverter air conditioning control module: The high performance and stability of VBFB165R09S make it an ideal choice among inverter air conditioning control modules, which can achieve efficient power regulation and control.
4. Solar inverter: This product is suitable for power switch modules in solar inverters, which can achieve stable operation and efficient conversion of solar power generation systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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