MOSFET

您现在的位置 > 首页 > MOSFET

VBFB165R08SE 产品详细

产品简介:

Product introduction:
VBsemi's VBFB165R08SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 8A. It adopts SJ_Deep-Trench technology and is packaged as TO251.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 460
- Drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO251

领域和模块应用:

Examples of application areas and modules:
1. Low-power power module: Because VBFB165R08SE has moderate drain current and low on-resistance, it is suitable for the design of low-power power modules, such as household power adapters, small LED lighting drivers, etc.
2. Industrial control system: In some industrial control systems, sensors, actuators, etc. need to be driven electrically. VBFB165R08SE can be used as a power switch module to ensure the stability and reliability of the system.
3. Automotive electronic module: TO251 package is suitable for automotive electronic module applications. VBFB165R08SE can be used for power switch modules in automotive electronic systems, such as power window control modules, vehicle chargers, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询