产品参数:
Detailed parameter description:
- Brand: VBsemi
- Model: VBFB165R07S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 700
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO251
领域和模块应用:
Examples of applicable fields and modules:
1. Electric vehicle charging pile: The voltage resistance and current carrying capacity of VBFB165R07S make it an important component in electric vehicle charging piles, ensuring high efficiency and stability.
2. Industrial power module: Suitable for designing industrial power modules to ensure stable and reliable power output to meet the needs of various industrial applications.
3. Solar inverter: Used in power conversion and control circuits in solar inverters to provide high-efficiency and reliable energy conversion solutions.
4. Power tools and household appliances: In power tools and household appliances that need to withstand high voltage and large current, it serves as a power switching device to ensure the performance and stability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性